Properties of strained and relaxed silicon germanium /

Properties of strained and relaxed silicon germanium /

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Bibliographic Details
Corporate Authors: Institution of Electrical Engineers, INSPEC (Information service). Electronic Materials Information Service
Other Authors: Kasper, E.
Format: Book
Language:English
Published: London : INSPEC, c1995.
Series:EMIS datareviews series ; no. 12
Subjects:
Germanium alloys > Structure.
Silicon alloys > Structure.
Semiconductors.
Heterostructures.
Superlattices as materials.
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245 0 0 |a Properties of strained and relaxed silicon germanium /  |c edited by Erich Kasper. 
246 3 |a Silicon germanium 
260 |a London :  |b INSPEC,  |c c1995. 
300 |a xiv, 232 p. :  |b ill. ;  |c 29 cm. 
440 0 |a EMIS datareviews series ;  |v no. 12 
500 |a On title page: IEE. 
504 |a Includes bibliographies and index. 
650 0 |a Germanium alloys  |x Structure. 
650 0 |a Silicon alloys  |x Structure. 
650 0 |a Semiconductors. 
650 0 |a Heterostructures. 
650 0 |a Superlattices as materials. 
700 1 |a Kasper, E. 
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