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01511cam a2200397 a 4500 |
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CARM |
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20081107130148.0 |
| 008 |
930907s1993 enka b 001 0 eng d |
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|a LC
|b eng
|c LC
|d LC
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|a lccopycat
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|a QC611.8.G3
|b P76 1993
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|a 537.6/223
|2 20
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|a RL 61
|2 blsrissc
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|a JK 67
|2 blsrissc
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0 |
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|a Properties of lattice-matched and strained indium gallium arsenide /
|c edited by Pallab Bhattacharya.
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| 246 |
3 |
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|a Indium gallium arsenide
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| 260 |
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|a London :
|b INSPEC, Institution of Electrical Engineers,
|c c1993.
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| 300 |
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|a xxi, 317 p. :
|b ill. ;
|c 29 cm.
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| 440 |
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0 |
|a EMIS datareviews series ;
|v no. 8
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| 504 |
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|a Includes bibliographical references and index.
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| 530 |
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|a Also available online via the World Wide Web, by subscription to Knovel.
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| 650 |
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0 |
|a Gallium arsenide semiconductors.
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| 650 |
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0 |
|a Indium alloys.
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| 653 |
0 |
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|a Semiconductors
|a Electronic properties.
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| 655 |
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7 |
|a Electronic books.
|2 lcsh
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| 700 |
1 |
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|a Bhattacharya, Pallab.
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| 710 |
2 |
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|a INSPEC (Information service)
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| 852 |
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|b CARM
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