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02783cam a2200337 a 4500 |
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20090225165730.0 |
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921002s1993 maua b 001 0 eng d |
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|a 92037801
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|a 9520950
|5 LACONCORD2021
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|a 0890064792
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|a (OCoLC)26851480
|5 LACONCORD2021
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|a TOC
|b eng
|c TOC
|d TOC
|d VCAV
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|a TK7871.58.P6
|b W35 1993
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|a 621.381535
|2 20
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|a High-power GaAs FET amplifiers /
|c John L.B. Walker, editor.
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| 260 |
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|a Boston :
|b Artech House,
|c c1993.
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| 300 |
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|a xii, 369 p. :
|b ill. ;
|c 24 cm.
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| 440 |
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|a Artech House microwave library
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| 504 |
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|a Includes bibliographical references and index.
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|a Ch. 1. Introduction and Basic Theory. 1.2. Analysis of Ideal GaAs FET Class A and B Amplifiers. 1.3. The Concept of Power per Millimeter of Gatewidth. 1.4. Small-Signal (Linear) and Large-Signal (Nonlinear) Models for an FET. 1.5. Overview of Design Techniques. 1.6. Bandwidth Limitations of Reactively Matched Amplifiers -- Ch. 2. High-Power GaAs FETs. 2.2. High-Power FET Design: FET Channel Cross Section Design. 2.3. High-Power FET Design: FET Pattern Design. 2.4. Thermal Properties. 2.5. Manufacturing. 2.6. Evaluation. 2.7. Current FETs. 2.8. Trends in Technology -- Ch. 3. Computer-Aided Design of GaAs FET Power Amplifiers. 3.2. GaAs FET Nonlinear Models. 3.3. A Large-Signal Amplifier Simulation -- Ch. 4. High-Power GaAs FET Amplifier Design. 4.2. Budgeting Transmitting Chain RF Performance. 4.3. Performance Characterization and Modeling. 4.4. Design Techniques. 4.5. Scaling. 4.6. Matching Network Design. 4.7. Thermal Considerations. 4.8. Gate Current and Insertion Phase.
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|a 4.9. Dual-Gate FET Power Amplifier -- Ch. 5. Thermal Effects and Reliability. 5.2. Thermal Fundamentals. 5.3. Thermal Calculations for Practical FETs. 5.4. Pulsed Operation. 5.5. Measurement of Thermal Resistance and Channel Temperature. 5.6. Reliability -- Ch. 6. Combining Techniques. 6.2. Distributed Amplifier Power Combining. 6.3. Passive Power Combining/Dividing Networks. 6.4. Power Combining Methods -- Ch. 7. Systems Applications of GaAs FET Power Amplifiers. 7.2. Satellite Applications. 7.3. Terrestrial Telecommunications. 7.4. Radar and EW Applications for High-Power GaAs FET Amplifiers.
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|a Power amplifiers.
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| 650 |
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|a Metal semiconductor field-effect transistors.
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| 650 |
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|a Gallium arsenide semiconductors.
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| 650 |
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|a Microwave integrated circuits.
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|a Walker, John L. B.
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|b CARM
|h A3:AB07G0
|i C11739
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