INSTANT - IGBT network simulation and transient analysis tool /

Uloženo v:

Podrobná bibliografie
Hlavní autor:	Hefner, A. R.
Korporace:	National Institute of Standards and Technology (U.S.), United States. Dept. of Commerce. Technology Administration
Médium:	Kniha
Jazyk:	English
Vydáno:	Gaithersburg, MD : U.S. Dept. of Commerce, Technology Administration : National Institute of Standards and Technology, 1992.
Edice:	Semiconductor measurement technology NIST special publication ; 400-88
Témata:	Metal oxide semiconductor field-effect transistors. Bipolar transistors > Data processing.

Podobné jednotky