INSTANT - IGBT network simulation and transient analysis tool /
Guardat en:
| Autor principal: | |
|---|---|
| Autor corporatiu: | , |
| Format: | Llibre |
| Idioma: | English |
| Publicat: |
Gaithersburg, MD :
U.S. Dept. of Commerce, Technology Administration : National Institute of Standards and Technology,
1992.
|
| Col·lecció: | Semiconductor measurement technology
NIST special publication ; 400-88 |
| Matèries: |
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| 100 | 1 | |a Hefner, A. R. | |
| 245 | 1 | 0 | |a INSTANT - IGBT network simulation and transient analysis tool / |c A.R. Hefner. |
| 260 | |a Gaithersburg, MD : |b U.S. Dept. of Commerce, Technology Administration : |b National Institute of Standards and Technology, |c 1992. | ||
| 300 | |a vii, 151 p. : |b ill. ; |c 28 cm. | ||
| 490 | 1 | |a Semiconductor measurement technology | |
| 490 | 1 | |a NIST special publication ; |v 400-88 | |
| 500 | |a "June 1992". | ||
| 504 | |a Bibliography: p. 85-86. | ||
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors. | |
| 650 | 0 | |a Bipolar transistors |x Data processing. | |
| 710 | 2 | |a National Institute of Standards and Technology (U.S.) | |
| 710 | 1 | |a United States. |b Dept. of Commerce. |b Technology Administration | |
| 830 | 0 | |a Semiconductor measurement technology | |
| 830 | 0 | |a NIST special publication ; |v 400-88 | |
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