Vertical cavity surface emitting lasers /
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| Autor principal: | |
|---|---|
| Formato: | Livro |
| Idioma: | English |
| Publicado em: |
Taunton, Somerset, England : New York :
Research Studies Press ; Wiley,
c1995.
|
| Colecção: | Electronic & electrical engineering research studies. Optoelectronics series ;
2. Electronic & electrical engineering research studies. Optoelectronics series ; 2. Electronic & electrical engineering research studies. Optoelectronics series ; 2 |
| Assuntos: | |
| Acesso em linha: | Publisher description |
| LEADER | 03504cam a2200397 a 4500 | ||
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| 010 | |a 95014959 | ||
| 019 | 1 | |a 11604667 |5 LACONCORD2021 | |
| 020 | |a 0471957402 (Wiley : alk. paper) | ||
| 020 | |a 0863801749 (Research Studies Press : alk. paper) | ||
| 035 | |a (OCoLC)32431889 |5 LACONCORD2021 | ||
| 040 | |a TOC |b eng |c TOC |d TOC | ||
| 050 | 0 | 0 | |a TA1700 |b .S24 1995 |
| 082 | 0 | 0 | |a 621.36/6 |2 20 |
| 100 | 1 | |a Sale, T. E. |q (Terence Edward), |d 1968- | |
| 245 | 1 | 0 | |a Vertical cavity surface emitting lasers / |c T.E. Sale. |
| 260 | |a Taunton, Somerset, England : |b Research Studies Press ; |a New York : |b Wiley, |c c1995. | ||
| 300 | |a xi, 312 p. : |b ill. ; |c 24 cm. | ||
| 490 | 1 | |a Electronic & electrical engineering research studies. Optoelectronics series ; |v 2. | |
| 490 | 1 | |a Electronic & electrical engineering research studies., Optoelectronics series ; |v 2 | |
| 504 | |a Includes bibliographical references and index. | ||
| 505 | 0 | |a 1. Introduction. 1.1. Background topics. 1.2. Lasers for optical computing. 1.3. Development of the surface emitting laser. 1.4. Devices in other material systems. 1.5. VCSEL development -- 2. Theory of dielectric reflectors and VCSEL cavities. 2.1. Bragg reflector theory. 2.2. AIAs / GaAs reflector stacks. 2.3. Design of laser structure -- 2.4. Conclusions -- 3. Gain calculations for strained InGaAs / GaAs quantum wells. 3.1. Basic theory of optically assisted transitions. 3.2. Band structure of strained InGaAs quantum wells. 3.3. Details of gain calculations. 3.4. Calculations -- 4. Materials growth and device fabrication. 4.1. Growth. 4.2. Comparisons of MBE and MOCVD. 4.3. Fabrication of devices -- 5. Resistance considerations for Bragg reflectors. 5.1. Heterointerfaces. 5.2. Heterojunctions under bias. 5.3. I/V Characteristics of real Bragg reflectors. 5.4. Optical considerations -- 6. Case Study I: Measurements on MBE grown devices. 6.1. Structure. 6.2. Material assessment. | |
| 505 | 8 | |a 6.3. Experimental method. 6.4. Measurements on etched mesa devices. 6.5. Polyimide passivated devices. 6.6. Ion implanted devices -- 7. Case Study II: Measurements on MOCVD grown devices. 7.1. Growth structure. 7.2. Material assessment. 7.3. Processing. 7.4. Measurements on etched mesa devices. 7.5. C.W. operation. 7.6. Ion implanted devices -- 8. Analysis of experimental data. 8.1. Threshold conditions. 8.2. Thermal modelling. 8.3. Operating power range. 8.4. Reflector resistance -- 9. Further issues. 9.1. Controlling spontaneous emission. 9.2. Modulation speed. 9.3. Noise. 9.4. Integration I: arrays. 9.5. Integration II: functional devices. 9.6. Thermal and output power limitations. | |
| 650 | 0 | |a Semiconductor lasers. | |
| 852 | 8 | |b CARM |p 0589268 |f BK | |
| 852 | 8 | |b SCAN |h A3:AG21F0 |i C12826 |p 0589268 |f BK | |
| 830 | 0 | |a Electronic & electrical engineering research studies. |p Optoelectronics series ; |v 2. | |
| 830 | 0 | |a Electronic & electrical engineering research studies. Optoelectronics series ; |v 2. | |
| 830 | 0 | |a Electronic & electrical engineering research studies. |p Optoelectronics series ; |v 2 | |
| 856 | 4 | 2 | |3 Publisher description |u http://www.loc.gov/catdir/enhancements/fy0745/95014959-d.html |
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