Vertical cavity surface emitting lasers /
保存先:
| 第一著者: | |
|---|---|
| フォーマット: | 図書 |
| 言語: | English |
| 出版事項: |
Taunton, Somerset, England : New York :
Research Studies Press ; Wiley,
c1995.
|
| シリーズ: | Electronic & electrical engineering research studies. Optoelectronics series ;
2. Electronic & electrical engineering research studies. Optoelectronics series ; 2. Electronic & electrical engineering research studies. Optoelectronics series ; 2 |
| 主題: | |
| オンライン･アクセス: | Publisher description |
目次:
- 1. Introduction. 1.1. Background topics. 1.2. Lasers for optical computing. 1.3. Development of the surface emitting laser. 1.4. Devices in other material systems. 1.5. VCSEL development
- 2. Theory of dielectric reflectors and VCSEL cavities. 2.1. Bragg reflector theory. 2.2. AIAs / GaAs reflector stacks. 2.3. Design of laser structure
- 2.4. Conclusions
- 3. Gain calculations for strained InGaAs / GaAs quantum wells. 3.1. Basic theory of optically assisted transitions. 3.2. Band structure of strained InGaAs quantum wells. 3.3. Details of gain calculations. 3.4. Calculations
- 4. Materials growth and device fabrication. 4.1. Growth. 4.2. Comparisons of MBE and MOCVD. 4.3. Fabrication of devices
- 5. Resistance considerations for Bragg reflectors. 5.1. Heterointerfaces. 5.2. Heterojunctions under bias. 5.3. I/V Characteristics of real Bragg reflectors. 5.4. Optical considerations
- 6. Case Study I: Measurements on MBE grown devices. 6.1. Structure. 6.2. Material assessment.
- 6.3. Experimental method. 6.4. Measurements on etched mesa devices. 6.5. Polyimide passivated devices. 6.6. Ion implanted devices
- 7. Case Study II: Measurements on MOCVD grown devices. 7.1. Growth structure. 7.2. Material assessment. 7.3. Processing. 7.4. Measurements on etched mesa devices. 7.5. C.W. operation. 7.6. Ion implanted devices
- 8. Analysis of experimental data. 8.1. Threshold conditions. 8.2. Thermal modelling. 8.3. Operating power range. 8.4. Reflector resistance
- 9. Further issues. 9.1. Controlling spontaneous emission. 9.2. Modulation speed. 9.3. Noise. 9.4. Integration I: arrays. 9.5. Integration II: functional devices. 9.6. Thermal and output power limitations.