Current trends in heterojunction bipolar transistors /

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Bibliografiska uppgifter
Övriga upphovsmän: Chang, M. F.
Materialtyp: Bok
Språk:English
Publicerad: Singapore ; River Edge, NJ : World Scientific, c1996.
Serie:Selected topics in electronics and systems ; vol. 2.
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050 0 0 |a TK7871.96.B55  |b C87 1996 
082 0 4 |a 621.3815282  |2 20 
245 0 0 |a Current trends in heterojunction bipolar transistors /  |c editor, M. F. Chang. 
260 |a Singapore ;  |a River Edge, NJ :  |b World Scientific,  |c c1996. 
300 |a xiv, 421 p. :  |b ill. ;  |c 26 cm. 
490 0 |a Selected topics in electronics and systems ;  |v vol. 2. 
505 0 |a Introduction / P. K. Tien -- Foreword / M. F. Chang -- III-V Heterojunction Bipolar Transistors for High-Speed Applications / M. F. Chang and P. M. Asbeck -- AlGaAs/GaAs HBTs for Analog and Digital Applications / K.-C. Wang, R. B. Nubling, K. Pedrotti, N.-H. Sheng, P. M. Asbeck, K. Poulton, J. Corcoran, K. Knudsen, H.-T. Yuan and C. Chang -- The Design and Fabrication of High-Speed HBT Circuits for Fiber-Optic Communication Systems / M. Obara and J. Akagi -- Ballistic Collection Transistors and Their Applications / T. Ishibashi, Y. Yamauchi, E. Sano, H. Nakajima and Y. Matsuoka -- HBTs for Microwave Power Applications / B. Bayraktaroglu and J. A. Higgins -- GaAs HBT Reliability / H. Sugahara -- Recent Developments in GaInP/GaAs Heterojunction Bipolar Transistors / W. Liu, E. Beam III, T. Kim and A. Khatibzadeh -- In P-Based Heterojunction Bipolar Transistors / H.-F. Chau, E. A. Beam III, Y.-C. Kao and W. Liu. 
505 8 |a Noise Characteristics of InP-Based Heterostructure Bipolar Transistors / Y. K. Chen, D. A. Humphrey, L. Fan, R. A. Hamm, D. Sivco, A. Y. Cho and A. Tate -- Silicon:Germanium Heterojunction Bipolar Transistors; From Experiment to Technology / B. S. Meyerson, D. L. Harame, J. Stork, E. Crabbe, J. Comfort and G. Patton -- Future Directions for HBT Development / P. M. Asbeck, M. F. Chang and K. Pedrotti. 
504 |a Includes bibliographical references. 
650 0 |a Bipolar transistors. 
650 0 |a Junction transistors. 
700 1 |a Chang, M. F. 
852 8 |b CARM  |h A3:AF37F0  |i C12739  |p 0582483  |f BK 
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