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02377nam a2200301 a 4500 |
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960423s1996 si a b 000 0 eng d |
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|a 12588338
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|a 9810220979
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|a VDU
|c VDU
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|a TK7871.96.B55
|b C87 1996
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|a 621.3815282
|2 20
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|a Current trends in heterojunction bipolar transistors /
|c editor, M. F. Chang.
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|a Singapore ;
|a River Edge, NJ :
|b World Scientific,
|c c1996.
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|a xiv, 421 p. :
|b ill. ;
|c 26 cm.
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| 490 |
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|a Selected topics in electronics and systems ;
|v vol. 2.
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| 505 |
0 |
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|a Introduction / P. K. Tien -- Foreword / M. F. Chang -- III-V Heterojunction Bipolar Transistors for High-Speed Applications / M. F. Chang and P. M. Asbeck -- AlGaAs/GaAs HBTs for Analog and Digital Applications / K.-C. Wang, R. B. Nubling, K. Pedrotti, N.-H. Sheng, P. M. Asbeck, K. Poulton, J. Corcoran, K. Knudsen, H.-T. Yuan and C. Chang -- The Design and Fabrication of High-Speed HBT Circuits for Fiber-Optic Communication Systems / M. Obara and J. Akagi -- Ballistic Collection Transistors and Their Applications / T. Ishibashi, Y. Yamauchi, E. Sano, H. Nakajima and Y. Matsuoka -- HBTs for Microwave Power Applications / B. Bayraktaroglu and J. A. Higgins -- GaAs HBT Reliability / H. Sugahara -- Recent Developments in GaInP/GaAs Heterojunction Bipolar Transistors / W. Liu, E. Beam III, T. Kim and A. Khatibzadeh -- In P-Based Heterojunction Bipolar Transistors / H.-F. Chau, E. A. Beam III, Y.-C. Kao and W. Liu.
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| 505 |
8 |
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|a Noise Characteristics of InP-Based Heterostructure Bipolar Transistors / Y. K. Chen, D. A. Humphrey, L. Fan, R. A. Hamm, D. Sivco, A. Y. Cho and A. Tate -- Silicon:Germanium Heterojunction Bipolar Transistors; From Experiment to Technology / B. S. Meyerson, D. L. Harame, J. Stork, E. Crabbe, J. Comfort and G. Patton -- Future Directions for HBT Development / P. M. Asbeck, M. F. Chang and K. Pedrotti.
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|a Includes bibliographical references.
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| 650 |
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|a Bipolar transistors.
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|a Junction transistors.
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|a Chang, M. F.
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