Process and device simulation for MOS-VLSI circuits /

Process and device simulation for MOS-VLSI circuits /

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Dettagli Bibliografici
Ente Autore: NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits Urbino, Italy
Altri autori: Antognetti, Paolo
Natura: Atti del Convegno Libro
Lingua:English
Pubblicazione: Boston : Hingham, MA : Nijhoff ; Distributors for the U.S. and Canada, Kluwer Boston, 1983.
Serie:NATO ASI series. Applied sciences ; no. 62
Soggetti:
Integrated circuits > Very large scale integration > Simulation methods > Congresses.
Metal oxide semiconductors > Simulation methods > Congresses.
Descrizione
Descrizione del documento:"Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982"--T.p. verso.
"Published in cooperation with NATO Scientific Affairs Division."
Descrizione fisica:xii, 619 p. : ill. ; 25 cm.
Bibliografia:Includes bibliographical references.
ISBN:902472824X (Netherlands)

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