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| LEADER |
01587nam a2200301 a 4500 |
| 001 |
c000009617 |
| 003 |
CARM |
| 005 |
00000000000000.0 |
| 008 |
830228s1983 maua b 10010 eng |
| 019 |
1 |
|
|a 2520840
|5 LACONCORD2021
|
| 020 |
|
|
|a 902472824X (Netherlands)
|
| 035 |
|
|
|a (OCoLC)9325055
|5 LACONCORD2021
|
| 050 |
0 |
0 |
|a TK7874
|b .N343 1982
|
| 111 |
2 |
0 |
|a NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits
|d (1982 :
|c Urbino, Italy)
|
| 245 |
1 |
0 |
|a Process and device simulation for MOS-VLSI circuits /
|c edited by Paolo Antognetti ... [et al.].
|
| 260 |
|
|
|a Boston :
|b Nijhoff ;
|a Hingham, MA :
|b Distributors for the U.S. and Canada, Kluwer Boston,
|c 1983.
|
| 300 |
|
|
|a xii, 619 p. :
|b ill. ;
|c 25 cm.
|
| 440 |
|
0 |
|a NATO ASI series.
|n Series E,
|p Applied sciences ;
|v no. 62
|
| 500 |
|
|
|a "Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982"--T.p. verso.
|
| 500 |
|
|
|a "Published in cooperation with NATO Scientific Affairs Division."
|
| 504 |
|
|
|a Includes bibliographical references.
|
| 650 |
|
0 |
|a Integrated circuits
|x Very large scale integration
|x Simulation methods
|x Congresses.
|
| 650 |
|
0 |
|a Metal oxide semiconductors
|x Simulation methods
|x Congresses.
|
| 700 |
1 |
|
|a Antognetti, Paolo.
|
| 852 |
8 |
|
|b CARM
|h A2:AL01E0
|i C03966
|p 0201232
|f BK
|
| 082 |
0 |
4 |
|a 621.381/73
|2 19
|
| 999 |
f |
f |
|i 0fd109a6-363b-5d2b-a08e-818d72373c52
|s 1aa6bf2a-c941-5981-8015-9912d18042ab
|
| 952 |
f |
f |
|p Can circulate
|a CAVAL
|b CAVAL
|c CAVAL
|d CARM 1 Store
|e C03966
|f A2:AL01E0
|h Other scheme
|i book
|m 0201232
|