High-power GaAs FET amplifiers /

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Bibliographic Details
Other Authors: Walker, John L. B.
Format: Book
Language:English
Published: Boston : Artech House, c1993.
Series:Artech House microwave library
Subjects:
Table of Contents:
  • Ch. 1. Introduction and Basic Theory. 1.2. Analysis of Ideal GaAs FET Class A and B Amplifiers. 1.3. The Concept of Power per Millimeter of Gatewidth. 1.4. Small-Signal (Linear) and Large-Signal (Nonlinear) Models for an FET. 1.5. Overview of Design Techniques. 1.6. Bandwidth Limitations of Reactively Matched Amplifiers
  • Ch. 2. High-Power GaAs FETs. 2.2. High-Power FET Design: FET Channel Cross Section Design. 2.3. High-Power FET Design: FET Pattern Design. 2.4. Thermal Properties. 2.5. Manufacturing. 2.6. Evaluation. 2.7. Current FETs. 2.8. Trends in Technology
  • Ch. 3. Computer-Aided Design of GaAs FET Power Amplifiers. 3.2. GaAs FET Nonlinear Models. 3.3. A Large-Signal Amplifier Simulation
  • Ch. 4. High-Power GaAs FET Amplifier Design. 4.2. Budgeting Transmitting Chain RF Performance. 4.3. Performance Characterization and Modeling. 4.4. Design Techniques. 4.5. Scaling. 4.6. Matching Network Design. 4.7. Thermal Considerations. 4.8. Gate Current and Insertion Phase.
  • 4.9. Dual-Gate FET Power Amplifier
  • Ch. 5. Thermal Effects and Reliability. 5.2. Thermal Fundamentals. 5.3. Thermal Calculations for Practical FETs. 5.4. Pulsed Operation. 5.5. Measurement of Thermal Resistance and Channel Temperature. 5.6. Reliability
  • Ch. 6. Combining Techniques. 6.2. Distributed Amplifier Power Combining. 6.3. Passive Power Combining/Dividing Networks. 6.4. Power Combining Methods
  • Ch. 7. Systems Applications of GaAs FET Power Amplifiers. 7.2. Satellite Applications. 7.3. Terrestrial Telecommunications. 7.4. Radar and EW Applications for High-Power GaAs FET Amplifiers.